A Bi 2Te 3 topological insulator as a new and outstanding counter electrode material for high-efficiency and endurable flexible perovskite solar cells. All-layered 2D optoelectronics: A high-performance UV-Vis-NIR broadband SnSe photodetector with Bi 2Te 3 topological insulator electrodes. Poly (4-styrenesulfonate)-induced sulfur vacancy self-healing strategy for monolayer MoS 2 homojunction photodiode. All-inorganic perovskite quantum dot-monolayer MoS 2 mixed-dimensional van der Waals heterostructure for ultrasensitive photodetector. Measuring the local mobility of graphene on semiconductors. Polar-induced selective epitaxial growth of multijunction nanoribbons for high-performance optoelectronics. Gate-tunable transport properties of in-situ capped Bi 2Te 3 topological insulator thin films. Core-shell MoO 3-MoS 2 nanowires for hydrogen evolution: A functional design for electrocatalytic materials. Few-layered PtS 2 phototransistor on h-BN with high gain. High-electron-mobility and air-stable 2D layered PtSe 2 FETs. Ultrathin non-van der Waals magnetic rhombohedral Cr 2S 3: Space-confined chemical vapor deposition synthesis and Raman scattering investigation. Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors. Approaching the Schottky-Mott limit in van der Waals metal-semiconductor junctions. Schottky barrier height engineering for electrical contacts of multilayered MoS 2 transistors with reduction of metal-induced gap states. Control of Schottky barriers in single layer MoS 2 transistors with ferromagnetic contacts. Graphene-MoS 2 hybrid structures for multifunctional photoresponsive memory devices. Tunable charge-trap memory based on few-layer MoS 2. Integrated circuits and logic operations based on single-layer MoS 2. Multibit MoS 2 photoelectronic memory with ultrahigh sensitivity. Metal-guided selective growth of 2D materials: Demonstration of a bottom-up CMOS inverter. Electric and photovoltaic behavior of a few-layer α-MoTe 2/MoS 2 dichalcogenide heterojunction. Black phosphorus-monolayer MoS 2 van der Waals heterojunction p-n diode. Nonvolatile memory cells based on MoS 2/graphene heterostructures. Tunable GaTe-MoS 2 van der Waals p-n junctions with novel optoelectronic performance. Van der Waals epitaxial growth of vertically stacked Sb 2Te 3/MoS 2 p-n heterojunctions for high performance optoelectronics. Self-powered broad-band photodetectors based on vertically stacked WSe 2/Bi 2Te 3 p-n heterojunctions. Ultrasensitive photodetectors based on monolayer MoS 2. Surface plasmon-enhanced photodetection in few layer MoS 2 phototransistors with Au nanostructure arrays. Highly sensitive, encapsulated MoS 2 photodetector with gate controllable gain and speed. Two-dimensional non-volatile programmable p-n junctions. The demonstration of epitaxial van der Waals Bi 2Te 3 contacts will facilitate the application of 2D MoS 2 nanosheet in next-generation low-power consumption electronics and optoelectronics. s)), and low flat-band SBH (60 meV), which is favorable as compared with MoS 2 FET with traditional Cr/Au electrodes contacts, and superior to the vast majority of the reported chemical vapor deposition (CVD) MoS 2-based FET device.Electrical characterizations indicate that the MoS 2 FET device with Bi 2Te 3 contacts possesses a high current on/off ratio (5 × 10 7), large effective carrier mobility (90 cm 2/(V Moreover, the small work function difference between Bi 2Te 3 and MoS 2 (Bi 2Te 3: 4.31 eV, MoS 2: 4.37 eV, measured by Kelvin probe force microscopy (KPFM)), enables small band bending and Ohmic contact at the junction interface. Here, a novel contact strategy is proposed, where Bi 2Te 3 nanosheets with high conductivity were in-situ epitaxially grown on MoS 2 as van der Waals contacts, which can effectively avoid the damage to MoS 2 caused during the device manufacturing process, leading to a high-performance MoS 2 FET. Two-dimensional (2D) semiconductors-based field effect transistors (FETs), holding great promise for next-generation information circuits, still suffer from poor contact quality at the metal-semiconductor junction interface, which severely hinders their further applications. Small contact resistance and low Schottky barrier height (SBH) are the keys to energy-efficient electronics and optoelectronics.
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